- 您现在的位置：买卖IC网 > Sheet目录343 > MIC5013YN (Micrel Inc)IC DRIVER MOSFET HI/LO SIDE 8DIP
MIC5013
Applications Information (Continued)
12V
1N5817
Micrel, Inc.
7 to 15V
R TH1
1k ?
ControlInput
R TH2
22k ?
C TH
22μF
MIC5013
1 Input Fault 8
2 Thresh V+ 7
3 Sense Gate 6
4 Source Gnd 5
10μF +
IRCZ4 4
Control Input
R TH
20k ?
MIC5013
1 Input Fault 8
2 Thresh V+ 7
3 Sense Gate 6
4 Source Gnd 5
100nF
+
10μF
1N4001 (2)
IRF540
100?
R S
43?
R2
18m ?
R1= V
R1
3.9k?
#6014
+
1mA
LOAD
Figure 5. Time-Variable
Trip Threshold
(using TAB and SOURCE for forcing, and SENSE and
KELVIN for sensing) is the best method of evaluating “R.”
Alternatively, “R” can be estimated for large MOSFETs
(R DS(ON) ≤ 100mΩ) by simply halving the stated R DS(ON) ,
or by subtracting 20 to 50mΩ from the stated R DS(ON) for
smaller MOSFETs.
High-Side Driver with Current Sensing MOSFET (Figure
5). The design starts by determining the value of “S” and
“R” for the MOSFET (use the guidelines described for the
low-side version). Let V TRIP = 100mV, and calculate R S for
a desired trip current. Next calculate R TH and R1. The trip
point is somewhat reduced when the output is at ground as
the voltage drop across R1 is zero. No clamping is required
for inductive loads, but may be added to reduce power dis-
sipation in the MOSFET.
Typical Applications
Start-up into a Dead Short. If the MIC5013 attempts to turn
on a MOSFET when the load is shorted, a very high current
?ows. The over-current shutdown will protect the MOSFET,
but only after a time delay of 5 to 10μs. The MOSFET must
be capable of handling the overload; consult the device’s
SOA curve. If a short circuit causes the MOSFET to exceed
its 10μs SOA, a small inductance in series with the source
can help limit di/dt to control the peak current during the 5
to 10μs delay.
When testing short-circuit behavior, use a current probe
rated for both the peak current and the high di/dt.
The over-current shutdown delay varies with comparator
overdrive, owing to noise ?ltering in the comparator. A delay
of up to 100μs can be observed at the threshold of shutdown.
A 20% overdrive reduces the delay to near minimum.
Incandescent Lamps . The cold ?lament of an incandes-
cent lamp exhibits less than one-tenth as much resistance
as when the ?lament is hot. The initial turn-on current of
a #6014 lamp is about 70A, tapering to 4.4A after a few
hundred milliseconds. It is unwise to set the over-current
Figure 6. Bootstrapped
High-Side Driver
trip point to 70A to accommodate such a load. A “resistive”
short that draws less than 70A could destroy the MOSFET
by allowing sustained, excessive dissipation. If the over-
current trip point is set to less than 70A, the MIC5013 will
not start a cold ?lament. The solution is to start the lamp
with a high trip point, but reduce this to a reasonable value
after the lamp is hot.
The MIC5013 over-current shutdown circuit is designed to
handle this situation by varying the trip point with time (see
Figure 5). R TH1 functions in the conventional manner, pro-
viding a current limit of approximately twice that required by
the lamp. R TH2 acts to increase the current limit at turn-on
to approximately 10 times the steady-state lamp current.
The high initial trip point decays away according to a 20ms
time constant contributed by C TH . R TH2 could be eliminated
with C TH working against the internal 1kΩ resistor, but this
results in a very high over-current threshold. As a rule of
thumb design the over-current circuitry in the conventional
manner, then add the R TH2 /C TH network to allow for lamp
start-up. Let R TH2 = (R TH1 ÷10)–1kΩ, and choose a capaci-
tor that provides the desired time constant working against
R TH2 and the internal 1kΩ resistor.
When the MIC5013 is turned off, the threshold pin (2) ap-
pears as an open circuit, and C TH is discharged through
R TH1 and R TH2 . This is much slower than the turn-on time
constant, and it simulates the thermal response of the ?la-
ment. If the lamp is pulse-width modulated, the current limit
will be reduced by the residual charge left in C TH .
Modifying Switching Times . Do not add external capacitors
to the gate to slow down the switching time. Add a resistor
(1kΩ to 51kΩ) in series with the gate of the MOSFET to
achieve this result.
Bootstrapped High-Side Driver (Figure 6). The speed
of a high-side driver can be increased to better than 10μs
by bootstrapping the supply off of the MOSFET source.
This topology can be used where the load is pulse-width
modulated (100Hz to 20kHz), or where it is energized
July 2005
9
MIC5013
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MIC5014YN
IC DRIVER MOSFET HI/LO SIDE 8DIP
MIC5016BWM
IC DRIVER MOSF DUAL HI/LO 16SOIC
MIC5018YM4 TR
IC DRIVER MOSFET HI SIDE SOT143
MIC5020YM
IC DRIVER MOSF LO SIDE HS 8-SOIC
MIC5021YN
IC DRIVER MOSFET HI SIDE HS 8DIP
MIC5400BWM
IC LED DRIVER RGB 28-SOIC
MKP1V240RL
SIDAC BIDIR 0.9A 240V DO-41
MKP3V240RL
SIDAC BIDIRECT 1A 240V DO-201AD
相关代理商/技术参数
MIC5014
制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver
MIC5014_05
制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver
MIC5014-1
制造商:MICREL 制造商全称:Micrel Semiconductor 功能描述:Low-Cost High- or Low-Side MOSFET Driver Final Information
MIC5014BM
功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
MIC5014BM TR
功能描述:IC DRIVER MOSF HI/LO SIDE 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
MIC5014BN
功能描述:IC DRIVER MOSFET HI/LO SIDE 8DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127
MIC5014YM
功能描述:功率驱动器IC Low Cost High Side MOSFET Predriver - Lead Free
RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MIC5014YM TR
功能描述:功率驱动器IC Low Cost High Side MOSFET Predriver - Lead Free
RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube